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FDS6990A
Dual MOSFET, N Channel, 30 V, 7.5 A, 0.011 ohm
不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號FDS6990A
訂購代碼
複捲式9845291RL
條帶式包裝9845291
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDS6990A is a dual N-channel logic level MOSFET produced using advanced PowerTrench process. It is especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
7.5A
Transistor Case Style
SOIC
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.000246