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數量 | 價格 |
---|---|
1+ | NT$83.490 |
10+ | NT$65.200 |
100+ | NT$46.020 |
500+ | NT$44.910 |
1000+ | NT$43.800 |
價格Each
最少: 1
多項: 1
NT$83.49
新增零件編號/ 品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
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產品訊息
製造商ONSEMI
製造商產品編號FDS86240
訂購代碼2083338
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.0173ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS86240 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for RDS (ON), switching performance and ruggedness. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0173ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000134