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FDV304P
Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount
18,000 有存貨
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18000 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 3000+ | NT$2.740 |
| 9000+ | NT$2.690 |
價格Each (Supplied on Full Reel)
最少: 3000
多項: 3000
NT$8,220.00
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDV304P
訂購代碼2438464
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id460mA
Drain Source On State Resistance1.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max860mV
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDV304P is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process is tailored to minimize ON-state resistance at low gate drive conditions. It is designed especially for application in battery power applications. It has excellent ON-state resistance even at gate drive voltages as low as 2.5V.
- Very low level gate drive requirements allowing direct operation
- Gate-source zener for ESD ruggedness, <gt/>6kV human body mode
- Compact industry standard surface-mount package
技術規格
Channel Type
P Channel
Continuous Drain Current Id
460mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
860mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDV304P 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001