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FFSD08120A
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 1.2 kV, 8 A, 55 nC
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產品訊息
製造商ONSEMI
製造商產品編號FFSD08120A
訂購代碼2895645
Product RangeEliteSiC Series
技術資料表
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current8A
Total Capacitive Charge55nC
Diode Case StyleTO-252 (DPAK)
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCLead (27-Jun-2024)
產品總覽
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
技術規格
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
55nC
No. of Pins
3 Pin
Diode Mounting
Surface Mount
SVHC
Lead (27-Jun-2024)
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
TO-252 (DPAK)
Operating Temperature Max
175°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.0001