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FFSP0865A
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 8 A, 27 nC, TO-220
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| 數量 | 價格 |
|---|---|
| 1+ | NT$82.720 |
| 10+ | NT$71.890 |
| 100+ | NT$64.210 |
價格Each
最少: 1
多項: 1
NT$82.72
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產品訊息
製造商ONSEMI
製造商產品編號FFSP0865A
訂購代碼2835586
Product RangeEliteSiC Series
技術資料表
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current8A
Total Capacitive Charge27nC
Diode Case StyleTO-220
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCLead (27-Jun-2024)
產品總覽
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
技術規格
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
27nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
Lead (27-Jun-2024)
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
TO-220
Operating Temperature Max
175°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001