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FQB27P06TM
Power MOSFET, P Channel, 60 V, 27 A, 0.07 ohm, TO-263 (D2PAK), Surface Mount
1,641 有存貨
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1615 件可于 3-4 個工作日後配送(英國 件庫存)
26 件可于 4-5 個工作日後配送(美國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$41.770 |
| 250+ | NT$40.940 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$4,177.00
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產品訊息
製造商ONSEMI
製造商產品編號FQB27P06TM
訂購代碼1611477RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id27A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FQB27P06TM is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- 175°C rated junction temperature
技術規格
Channel Type
P Channel
Continuous Drain Current Id
27A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
120W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FQB27P06TM 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002055