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FQD11P06TM
Power MOSFET, P Channel, 60 V, 9.4 A, 0.185 ohm, TO-252 (DPAK), Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號FQD11P06TM
訂購代碼2575362
Product RangeQFET
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id9.4A
Drain Source On State Resistance0.185ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
附註
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
9.4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.185ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001512