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FQP3P20
Power MOSFET, P Channel, 200 V, 2.8 A, 2.06 ohm, TO-220, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQP3P20
訂購代碼2575366
Product RangeQFET
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.8A
Drain Source On State Resistance2.06ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation52W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
MSL-
SVHCLead (17-Jan-2022)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2.8A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
2.06ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
QFET
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2022)
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產品合規憑證
重量 (公斤)：.005897