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FQP47P06
MOSFET, P-CHANNEL, -60V, -47A, TO-220-3
983 有存貨
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983 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$121.230 |
| 10+ | NT$71.200 |
| 100+ | NT$60.940 |
| 500+ | NT$55.810 |
| 1000+ | NT$54.700 |
價格Each
最少: 1
多項: 1
NT$121.23
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FQP47P06
訂購代碼2575367
Product RangeQFET
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id47A
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The FQP47P06 is a -60V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 84nC)
- Low Crss (typical 320pF)
- 100% avalanche tested
- ±25V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
- 0.94°C/W thermal resistance, junction to case
技術規格
Channel Type
P Channel
Continuous Drain Current Id
47A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002041