列印頁面
FQP7N80C
Power MOSFET, N Channel, 800 V, 6.6 A, 1.57 ohm, TO-220, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQP7N80C复制
訂購代碼1095073
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id6.6A
Drain Source On State Resistance1.57ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FQP7N80C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (27nC)
- Low Crss (10pF)
- 100% avalanche tested
應用
Industrial, Power Management, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6.6A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.57ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002033