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產品訊息
製造商ONSEMI
製造商產品編號MBRD660CTT4G
訂購代碼2317413
Product RangeMBRD6
技術資料表
Repetitive Peak Reverse Voltage60V
Average Forward Current6A
Diode ConfigurationDual Common Cathode
Diode Case StyleTO-252 (DPAK)
No. of Pins3Pins
Forward Voltage Max900mV
Forward Surge Current75A
Operating Temperature Max175°C
Diode MountingSurface Mount
Product RangeMBRD6
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MBRD660CTT4G is a SWITCHMODE™ Power Rectifier with epoxy moulded case. This state-of-the-art device is designed for use in switching power supplies, inverters and as free-wheeling diodes.
- Extremely fast switching
- Extremely low forward drop
- Platinum barrier with avalanche guard-rings
- All external surfaces corrosion-resistant
應用
Power Management, Automotive, Industrial
技術規格
Repetitive Peak Reverse Voltage
60V
Diode Configuration
Dual Common Cathode
No. of Pins
3Pins
Forward Surge Current
75A
Diode Mounting
Surface Mount
Qualification
-
Average Forward Current
6A
Diode Case Style
TO-252 (DPAK)
Forward Voltage Max
900mV
Operating Temperature Max
175°C
Product Range
MBRD6
SVHC
No SVHC (25-Jun-2025)
MBRD660CTT4G 的替代選擇
找到 3 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000426