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MGSF2N02ELT1G
Power MOSFET, N Channel, 20 V, 2.8 A, 0.085 ohm, SOT-23, Surface Mount
1,328 有存貨
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1328 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$7.010 |
| 500+ | NT$4.750 |
| 1500+ | NT$4.660 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$701.00
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號MGSF2N02ELT1G
訂購代碼1453618RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.8A
Drain Source On State Resistance0.085ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MGSF2N02ELT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
- Low RDS (ON) provides higher efficiency and extends battery life
- Miniature surface-mount package saves board space
- IDSS Specified at elevated temperature
- -55 to 150°C Operating temperature range
應用
Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
MGSF2N02ELT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000008