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MJ11015G
Darlington Transistor, PNP, 120 V, 200 W, 30 A, TO-3, 2 Pins
897 有存貨
500 即日起您可預購補貨
897 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$239.970 |
| 5+ | NT$210.790 |
| 10+ | NT$181.600 |
| 50+ | NT$170.080 |
| 100+ | NT$158.550 |
| 250+ | NT$147.020 |
價格Each
最少: 1
多項: 1
NT$239.97
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MJ11015G
訂購代碼9556575
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd200W
DC Collector Current30A
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
- Collector to emitter voltage (Vce) of -120V
- Collector current (Ic) of -30A
- Power dissipation of 200W
- Operating junction temperature range from -55°C to 200°C
- Collector emitter breakdown Voltage of -120V
- Collector emitter saturation voltage of -3V at 20A collector current
應用
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
技術規格
Transistor Polarity
PNP
Power Dissipation Pd
200W
RF Transistor Case
TO-3
DC Current Gain hFE
1000hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
30A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (25-Jun-2025)
MJ11015G 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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重量 (公斤)：.011793