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MJ11033G
Darlington Transistor, PNP, 120 V, 300 W, 50 A, TO-3, 2 Pins
11 有存貨
100 即日起您可預購補貨
11 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$392.000 |
| 5+ | NT$335.930 |
| 10+ | NT$279.860 |
| 50+ | NT$276.120 |
| 100+ | NT$272.370 |
| 250+ | NT$268.620 |
價格Each
最少: 1
多項: 1
NT$392.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MJ11033G
訂購代碼2535620
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd300W
DC Collector Current50A
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE18000hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Diode protection to rated IC
應用
Industrial, Power Management
技術規格
Transistor Polarity
PNP
Power Dissipation Pd
300W
RF Transistor Case
TO-3
DC Current Gain hFE
18000hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
50A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (25-Jun-2025)
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Mexico
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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重量 (公斤)：.014061