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MJH11022G
Darlington Transistor, Darlington, NPN, 250 V, 150 W, 15 A, TO-218, 3 Pins
322 有存貨
240 即日起您可預購補貨
322 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$178.640 |
| 10+ | NT$102.630 |
| 100+ | NT$80.180 |
| 500+ | NT$78.580 |
| 1000+ | NT$76.980 |
價格Each
最少: 1
多項: 1
NT$178.64
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MJH11022G
訂購代碼1611190
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo250V
Power Dissipation Pd150W
DC Collector Current15A
RF Transistor CaseTO-218
No. of Pins3Pins
DC Current Gain hFE100hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MJH11022G is a 250V NPN Darlington Bipolar Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11021 (PNP) and MJH11022 (NPN) are complementary devices.
- High DC current gain
- 250VDC Minimum collector-emitter sustaining voltage (VCEO(sus))
- Low collector-emitter saturation voltage (VCE (sat))
- Monolithic construction
- 250VDC Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
- 30ADC Peak collector current
- 0.5A DC Base current (IB)
- 0.83°C/W Thermal resistance, junction to case
應用
Industrial, Motor Drive & Control
技術規格
Transistor Polarity
NPN
Power Dissipation Pd
150W
RF Transistor Case
TO-218
DC Current Gain hFE
100hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
250V
DC Collector Current
15A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (25-Jun-2025)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.003856