列印頁面
MMBFU310LT1G
JFET Transistor, JFET, 25 V, 60 mA, 6 V, SOT-23, 3 Pin, 150 °C
25,864 有存貨
需要更多？
25864 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$6.430 |
| 500+ | NT$4.300 |
| 1500+ | NT$4.220 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$643.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MMBFU310LT1G
訂購代碼1431342RL
技術資料表
Gate Source Breakdown Voltage Max25V
Zero Gate Voltage Drain Current Max60mA
Gate Source Cutoff Voltage Max6V
Transistor Case StyleSOT-23
No. of Pins3 Pin
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBFU310LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The low RDS (ON) provides higher efficiency and extends battery life. The device is encapsulated in a surface-mount package which saves board space.
- 25V Drain-source voltage
- 25V Gate-source voltage
- 10mA Gate current
應用
Industrial, Power Management
技術規格
Gate Source Breakdown Voltage Max
25V
Gate Source Cutoff Voltage Max
6V
No. of Pins
3 Pin
Channel Type
N Channel
Product Range
-
MSL
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Max
60mA
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
MMBFU310LT1G 的替代選擇
找到 6 個產品
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454