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MMBT2907ALT1G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 300 mW, SOT-23, Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號MMBT2907ALT1G
訂購代碼1459099
Product RangeMMBTxxxx
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Continuous Collector Current600mA
Power Dissipation300mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
- Halogen-free/BFR-free
- -60VDC Collector to base voltage (VCBO)
- -5VDC Emitter to base voltage (VEBO)
- -1200mADC Peak collector current
- 556°C/W Thermal resistance, junction to ambient
應用
Industrial, Power Management
技術規格
Transistor Polarity
PNP
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
300mW
Transistor Mounting
Surface Mount
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
MMBT2907ALT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000065