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產品訊息
製造商ONSEMI
製造商產品編號MMBT3904WT1G
訂購代碼1459102
Product RangeMMBTxxxx
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation150mW
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min300hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
技術規格
Transistor Polarity
NPN
Continuous Collector Current
200mA
Transistor Case Style
SOT-323
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
40V
Power Dissipation
150mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
MMBT3904WT1G 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000544