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產品訊息
製造商ONSEMI
製造商產品編號MMBTA42LT1G
訂購代碼1459111
Product RangeMMBTxxxx
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max300V
Continuous Collector Current500mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min50hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The MMBTA42LT1G is a 300V NPN silicon high voltage Bipolar Transistor designed for general purpose amplifier applications. The device is suitable for lower power surface mount applications.
- Halogen-free/BFR-free
- AEC-Q101 qualified and PPAP capable
- 300VDC Collector to base voltage (VCBO)
- 6VDC Emitter to base voltage (VEBO)
- 556°C/W Thermal resistance, junction to ambient
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN
Continuous Collector Current
500mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
50hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
300V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
MMBTA42LT1G 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002