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MMBTH10LT1G
Bipolar - RF Transistor, General Purpose, NPN, 25 V, 650 MHz, 225 mW, 4 mA, SOT-23
可供訂購
製造商標準交貨時間：12 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 3000+ | NT$0.961 |
| 9000+ | NT$0.929 |
價格Each (Supplied on Full Reel)
最少: 3000
多項: 3000
NT$2,883.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MMBTH10LT1G
訂購代碼2441389
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Transition Frequency650MHz
Power Dissipation225mW
Continuous Collector Current4mA
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMBTH10LT1G is a NPN Silicon VHF/UHF Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
- Halogen-free
應用
RF Communications, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Transistor Polarity
NPN
Transition Frequency
650MHz
Continuous Collector Current
4mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
25V
Power Dissipation
225mW
Transistor Case Style
SOT-23
DC Current Gain hFE Min
60hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001