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MMSD301T1G
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOD-123
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產品訊息
製造商ONSEMI
製造商產品編號MMSD301T1G
訂購代碼2463432RL
Product RangeMMSD3
技術資料表
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage600mV
Diode Capacitance0.9pF
Diode Case StyleSOD-123
No. of Pins2 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product RangeMMSD3
SVHCNo SVHC (25-Jun-2025)
產品總覽
The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
- Extremely low minority carrier lifetime
- Very low capacitance
- Low reverse leakage
- -55 to 125°C Operating junction temperature range
應用
RF Communications, Sensing & Instrumentation, Industrial
技術規格
Diode Configuration
Single
Forward Current
200mA
Diode Capacitance
0.9pF
No. of Pins
2 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (25-Jun-2025)
Reverse Voltage
30V
Forward Voltage
600mV
Diode Case Style
SOD-123
Diode Mounting
Surface Mount
Product Range
MMSD3
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001