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NDS9945.
Dual MOSFET, N Channel, 60 V, 3.5 A, 0.1 ohm
產品訊息
製造商ONSEMI
製造商產品編號NDS9945.
訂購代碼1653654RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.1ohm
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.1ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleSOIC
Power Dissipation Pd1.6W
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NDS9945 is a dual N-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 10A Pulsed drain current
應用
Industrial, Power Management
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.5A
On Resistance Rds(on)
0.1ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.1ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
3.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
1.6W
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000907