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NDT3055L
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號NDT3055L
訂購代碼2336834
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4A
Drain Source On State Resistance0.1ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- Low drive requirements allowing operation directly from logic drivers
應用
Power Management, Motor Drive & Control, Automotive
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
NDT3055L 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000274