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NSS60600MZ4T1G
Bipolar (BJT) Single Transistor, PNP, 60 V, 6 A, 2 W, SOT-223, Surface Mount
5,815 有存貨
2,000 即日起您可預購補貨
5815 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$24.860 |
| 10+ | NT$18.120 |
| 50+ | NT$11.780 |
| 200+ | NT$10.410 |
| 500+ | NT$9.030 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$24.86
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NSS60600MZ4T1G
訂購代碼2317597
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Continuous Collector Current6A
Power Dissipation2W
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency100MHz
DC Current Gain hFE Min70hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
產品總覽
The NSS60600MZ4T1G is a 6A PNP Bipolar Transistor ideal for high speed switching applications where power saving is a concern. It is a combination of low saturation voltage and high gain.
- Low collector-emitter saturation voltage
- Minimized power loss
- High DC current gain
- Very low current requirements
- High current-gain bandwidth product
- Ideal for high frequency designs
- Superior gain linearity
- Minimal distortion
- Halogen-free
- AECQ101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive, Portable Devices, Motor Drive & Control, Computers & Computer Peripherals
技術規格
Transistor Polarity
PNP
Continuous Collector Current
6A
Transistor Case Style
SOT-223
No. of Pins
4Pins
DC Current Gain hFE Min
70hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Power Dissipation
2W
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
NSS60600MZ4T1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000295