列印頁面
NTE4151PT1G
Power MOSFET, P Channel, 20 V, 760 mA, 0.36 ohm, SC-89, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號NTE4151PT1G
訂購代碼2845376
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id760mA
Drain Source On State Resistance0.36ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation313mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
760mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
4.5V
Power Dissipation
313mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536