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NTE4153NT1G
Power MOSFET, N Channel, 20 V, 915 mA, 0.23 ohm, SC-89, Surface Mount
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52523 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$7.800 |
| 50+ | NT$6.310 |
| 100+ | NT$4.810 |
| 500+ | NT$3.270 |
| 1500+ | NT$3.210 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$39.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTE4153NT1G
訂購代碼2464118
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id915mA
Drain Source On State Resistance0.23ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max760mV
Power Dissipation300mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTE4153NT1G is a N-channel Small Signal MOSFET offers 20V drain source voltage and 915mA continuous drain current. It is suitable for load/power switches, power supply converter circuits, battery management, portables like cell phones, PDAs, digital cameras and pagers.
- Low RDS (ON) improving system efficiency
- Low threshold voltage
- ESD protected gate
- -55 to 150°C Operating temperature range
應用
Power Management, Consumer Electronics, Computers & Computer Peripherals, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
915mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
4.5V
Power Dissipation
300mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.23ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
760mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
NTE4153NT1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000005