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NTGS3443T1G
Power MOSFET, P Channel, 20 V, 3.1 A, 0.065 ohm, TSOP, Surface Mount
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2209 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$15.860 |
| 50+ | NT$13.130 |
| 100+ | NT$10.400 |
| 500+ | NT$7.110 |
| 1500+ | NT$6.970 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$5.450 |
| 9000+ | NT$5.350 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NTGS3443T1G
訂購代碼
整卷2442209
複捲式1611251RL
條帶式包裝1611251
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.065ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTGS3443T1G is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA cards.
- Ultra-low RDS (ON)
- Higher efficiency extending battery life
- Miniature surface-mount package
- -55 to 150°C Operating temperature range
應用
Portable Devices, Consumer Electronics, Power Management, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
950mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
NTGS3443T1G 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000058