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NTR4101PT1G
Power MOSFET, P Channel, 20 V, 3.2 A, 0.085 ohm, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號NTR4101PT1G
訂購代碼1431303RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.2A
Drain Source On State Resistance0.085ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max720mV
Power Dissipation730mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications.
- Leading -20V Trench for low RDS (ON)
- -1.8V Rated for low voltage gate drive
- Surface-mount for small footprint
- Halogen-free
- -55 to 150°C Operating junction temperature range
應用
Power Management, Computers & Computer Peripherals, Portable Devices, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
730mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
720mV
No. of Pins
3Pins
Product Range
-
MSL
-
NTR4101PT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000045