列印頁面
NVGS5120PT1G
Power MOSFET, P Channel, 60 V, 2.5 A, 0.111 ohm, TSOP, Surface Mount
2,313 有存貨
需要更多？
2313 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$19.610 |
| 50+ | NT$17.980 |
| 100+ | NT$16.350 |
| 500+ | NT$13.100 |
| 1500+ | NT$12.840 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$98.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號NVGS5120PT1G
訂購代碼2728048
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.111ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.1W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
1.1W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.111ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
NVGS5120PT1G 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000052