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2N7002WT1G
Power MOSFET, N Channel, 60 V, 340 mA, 1.6 ohm, SOT-323, Surface Mount
17,279 有存貨
24,000 即日起您可預購補貨
17279 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$2.690 |
| 500+ | NT$1.780 |
| 1500+ | NT$1.750 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$269.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N7002WT1G
訂購代碼2533171RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id340mA
Drain Source On State Resistance1.6ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The 2N7002WT1G is a N-channel small signal Power MOSFET ideal for low power applications. It offers 60V drain source voltage and 310mA continuous drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, DSC and PDA applications.
- Low RDS (ON)
- Small footprint surface-mount package
- Halogen-free
- ESD Protected
- -55 to 150°C Operating junction temperature range
應用
Portable Devices, Consumer Electronics, Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
340mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
2N7002WT1G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000055