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產品訊息
製造商ONSEMI
製造商產品編號BC857CDW1T1G
訂購代碼2464067
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP45V
Continuous Collector Current NPN-
Continuous Collector Current PNP100mA
Power Dissipation NPN-
Power Dissipation PNP250mW
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP420hFE
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP100MHz
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BC857CDW1T1G is a dual PNP general purpose Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
技術規格
Transistor Polarity
PNP
Collector Emitter Voltage Max PNP
45V
Continuous Collector Current PNP
100mA
Power Dissipation PNP
250mW
DC Current Gain hFE Min PNP
420hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
100MHz
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001