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BSS123L
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
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72238 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 500+ | NT$1.910 |
| 1500+ | NT$1.880 |
價格Each (Supplied on Cut Tape)
最少: 500
多項: 5
NT$955.00
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號BSS123L
訂購代碼2575356RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.405V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, logic level transistorss, high speed line drivers, power management/power supply and switching applications.
- High density cell design for low on-resistance
- Rugged and reliable
- Very low capacitance
- Fast switching speed
應用
Power Supplies, Power Management, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.405V
No. of Pins
3Pins
Product Range
-
MSL
-
BSS123L 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000002