列印頁面
BSS138
Power MOSFET, N Channel, 50 V, 220 mA, 3.5 ohm, SOT-23, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號BSS138
訂購代碼2323154
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id220mA
Drain Source On State Resistance3.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.3V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS138 is a 50V N-channel logic level enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Rugged and reliable
- ±20V gate source voltage (VGSS)
- 350°C/W thermal resistance, junction to ambient
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
220mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
BSS138 的替代選擇
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000034