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EFC8811R-TF
Dual MOSFET, N Channel, 12 V, 12 V, 27 A, 27 A
產品訊息
製造商ONSEMI
製造商產品編號EFC8811R-TF
訂購代碼2706277RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id27A
On Resistance Rds(on)0.0023ohm
Continuous Drain Current Id N Channel27A
Continuous Drain Current Id P Channel27A
Drain Source On State Resistance N Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleCSP
Gate Source Threshold Voltage Max1.3V
Power Dissipation Pd2.5W
No. of Pins6Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (14-Jun-2023)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
On Resistance Rds(on)
0.0023ohm
Continuous Drain Current Id P Channel
27A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.3V
No. of Pins
6Pins
Power Dissipation P Channel
2.5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (14-Jun-2023)
Transistor Polarity
N Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
27A
Continuous Drain Current Id N Channel
27A
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
4.5V
Transistor Case Style
CSP
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (14-Jun-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001