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FCP11N60
Power MOSFET, N Channel, 650 V, 11 A, 0.38 ohm, TO-220, Through Hole
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產品訊息
製造商ONSEMI
製造商產品編號FCP11N60
訂購代碼1095003
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id11A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FCP11N60 is a 650V N-channel SuperFET® MOSFET, high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. This product is general usage and suitable for many different applications.
- Ultra low gate charge
- Low effective output capacitance
- 100% Avalanche tested
應用
Power Management, Industrial, Communications & Networking
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.04613