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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
23,986 有存貨
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10,230 件可于 1-2 個工作日後配送(新加坡 件庫存)
13,756 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$21.020 | NT$105.10 |
| 總計 價格 | NT$105.10 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$21.020 |
| 50+ | NT$17.360 |
| 100+ | NT$13.690 |
| 500+ | NT$10.490 |
| 1500+ | NT$10.280 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$9.880 |
| 9000+ | NT$9.690 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC6321C复制
製造商標準前置時間15 週
訂購代碼
整卷2438427
複捲式9844848RL
條帶式包裝9844848
技術資料表
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Drain Source On State Resistance N Channel0.45ohm
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
應用
Industrial, Power Management
技術規格
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
900mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
0.45ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
FDC6321C 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000113