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| 數量 | 價格 |
|---|---|
| 1+ | NT$70.580 |
| 10+ | NT$45.310 |
| 100+ | NT$38.860 |
| 500+ | NT$32.400 |
| 1000+ | NT$29.220 |
| 5000+ | NT$26.080 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$70.58
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDD5690
訂購代碼9845038
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source On State Resistance0.027ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
FDD5690 的替代選擇
找到 4 個產品
產品總覽
The FDD5690 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- 23nC Typical low gate charge
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.00036