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產品訊息
製造商ONSEMI
製造商產品編號FDD6685
訂購代碼1471043
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation52W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDD6685 is a P-channel MOSFET is a rugged gate version of advanced PowerTrench® process, fast switching speed and high performance trench technology for extremely low RDS(ON).
- Fast switching
- ±20V Gate-source voltage
- High power and current handling capability
- AEC-Q101 Qualified
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
40A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDD6685 的替代選擇
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原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000466