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產品訊息
製造商ONSEMI
製造商產品編號FDD8444..
訂購代碼
複捲式1228329RL
條帶式包裝1228329
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id17.5A
Drain Source On State Resistance4000µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
產品總覽
The FDD8444 is a N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
- Qualified to AEC-Q101
應用
Power Management, Automotive, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
17.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
4000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.000564

