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FDG6320C
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 4 ohm
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDG6320C
訂購代碼1467972
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel220mA
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDG6320C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
應用
Industrial, Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
220mA
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
220mA
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.00001