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FDMC6679AZ
Power MOSFET, P Channel, 30 V, 20 A, 8600 µohm, MLP, Surface Mount
16,340 有存貨
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16340 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$27.730 |
| 500+ | NT$21.680 |
| 1000+ | NT$17.860 |
| 5000+ | NT$17.270 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$2,773.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMC6679AZ
訂購代碼2083251RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance8600µohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMC6679AZ is a P-channel MOSFET produced using PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 8kV typical HBM ESD protection level
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
20A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDMC6679AZ 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000241