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FDMS3572
Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDMS3572
訂購代碼1495180
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id8.8A
Drain Source On State Resistance0.0165ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.2V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMS3572 is an UItraFET Trench® N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS (ON), low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters.
- Low Miller charge
- Optimized efficiency at high frequencies
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.8A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000112