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| 數量 | 價格 |
|---|---|
| 5+ | NT$118.400 |
| 50+ | NT$106.560 |
| 100+ | NT$94.720 |
| 500+ | NT$93.070 |
| 1500+ | NT$91.210 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$592.00
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產品訊息
製造商ONSEMI
製造商產品編號FDMT80080DC
訂購代碼2825183
Product RangePowerTrench Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id254A
Drain Source On State Resistance1350µohm
Transistor Case StyleDual Cool 88
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
FDMT80080DC is a N-channel dual Cool™ 88 PowerTrench® MOSFET. It is produced using Fairchild semiconductor’s advanced PowerTrench® process. Advancements in both silicon and dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. Application includes OringFET / Load switching, synchronous rectification, DC-DC conversion.
- Advanced package and silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- 100% UIL tested
- Drain to source breakdown voltage is 80V (min, ID = 250μA, VGS = 0V, TJ = 25°C)
- Gate to source leakage current is 100nA (max, VGS = ±20V, VDS = 0V, TJ = 25°C)
- Gate to source threshold voltage is 3.1V (typ, VGS = VDS, ID = 250μA)
- Input capacitance is 14800pF (min, VDS = 40V, VGS = 0V, f = 1MHz)
- Gate resistance is 1.8ohm (typ, TJ = 25°C)
- Turn-on delay time is 67ns (typ, VDD = 40V, ID = 36A, VGS = 10V, RGEN = 6ohm)
- Dual Cool™ package, operating and storage junction temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
254A
Transistor Case Style
Dual Cool 88
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
1350µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
PowerTrench Series
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0004