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FDN308P
Power MOSFET, P Channel, 20 V, 1.5 A, 0.125 ohm, SuperSOT, Surface Mount
2,491 有存貨
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2491 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$25.980 |
| 10+ | NT$16.190 |
| 100+ | NT$10.470 |
| 500+ | NT$8.000 |
| 1000+ | NT$5.830 |
| 5000+ | NT$4.910 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$129.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDN308P
訂購代碼1700631
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.5A
Drain Source On State Resistance0.125ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN308P is a 2.5V specified P-channel MOSFET uses a rugged gate version of advanced PowerTrench® process. It has been optimized for power management and load switch applications with a wide range of gate drive voltage (2.5 to 12V). The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1.5A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDN308P 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002