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FDN338P
Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount
9,323 有存貨
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9323 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$8.790 |
| 500+ | NT$6.100 |
| 1500+ | NT$5.980 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$879.00
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產品訊息
製造商ONSEMI
製造商產品編號FDN338P
訂購代碼9846301RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.115ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.115ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDN338P 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536