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FDP75N08A
Power MOSFET, N Channel, 75 V, 75 A, 0.011 ohm, TO-220, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDP75N08A
訂購代碼1324801
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id75A
Drain Source On State Resistance0.011ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation137W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDP75N08A is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor's planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- Fast switching
- Improved dV/dt capability
- 145nC Typical low gate charge
- 86pF Typical low Crss
應用
Power Management, Lighting, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
137W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.002