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FDP8880
Power MOSFET, N Channel, 30 V, 54 A, 0.0116 ohm, TO-220, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDP8880
訂購代碼1228334
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id54A
Drain Source On State Resistance0.0116ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
FDP8880 的替代選擇
找到 1 個產品
產品總覽
The FDP8880 is a PowerTrench® N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast-switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
54A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0116ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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產品合規憑證
重量 (公斤)：.002