列印頁面
FDS4953
Dual MOSFET, P Channel, 30 V, 5 A
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDS4953
訂購代碼1467982RL
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id5A
On Resistance Rds(on)0.055ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel5A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.055ohm
Continuous Drain Current Id P Channel
5A
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
Channel Type
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5A
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.54