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FDS6612A
Power MOSFET, N Channel, 30 V, 8.4 A, 0.022 ohm, SOIC, Surface Mount
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| 數量 | 價格 |
|---|---|
| 5+ | NT$24.670 |
| 50+ | NT$20.830 |
| 100+ | NT$16.980 |
| 500+ | NT$13.230 |
| 1000+ | NT$12.020 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$123.35
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產品訊息
製造商ONSEMI
製造商產品編號FDS6612A
訂購代碼1467983
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.4A
Drain Source On State Resistance0.022ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
產品總覽
The FDS6612A is a single N-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8.4A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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產品合規憑證
重量 (公斤)：.000127