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FDS89141
Dual MOSFET, N Channel, 100 V, 100 V, 3.5 A, 3.5 A, 0.047 ohm
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| 數量 | 價格 |
|---|---|
| 100+ | NT$54.930 |
| 500+ | NT$48.020 |
| 1000+ | NT$46.470 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$5,493.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS89141
訂購代碼2083349RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id3.5A
Continuous Drain Current Id N Channel3.5A
On Resistance Rds(on)0.047ohm
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.047ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.047ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd31W
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 18A Pulsed drain current
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
3.5A
Continuous Drain Current Id P Channel
3.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
31W
Power Dissipation P Channel
31W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
3.5A
On Resistance Rds(on)
0.047ohm
Drain Source On State Resistance N Channel
0.047ohm
Drain Source On State Resistance P Channel
0.047ohm
Gate Source Threshold Voltage Max
3.1V
No. of Pins
8Pins
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000272